to-251 -3l plastic-encapsulate transistors 2SD1802 transistor (npn) features z adoption of fbet,mbit p rocesses z large c urrent c apacity and w ide aso z low c ollector-to- e mitter s aturation v oltage z fast s witching s peed maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 6 v i c collector current ?continuous 3 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =40v, i e =0 1 ? a emitter cut-off current i ebo v eb =4v, i c =0 1 ? a h fe(1) v ce =2v, i c =100ma 100 560 dc current gain h fe(2) v ce =2v, i c =3a 35 collector-emitter saturation voltage v ce(sat) i c =2a, i b =100ma 0.5 v base-emitter saturation voltage v be(sat) i c =2a, i b =100ma 1.2 v transition frequency f t v ce =10v, i c =50ma 150 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 25 pf classification of h fe(1) rank r s t u range 100-200 140-280 200-400 280-560 to-251 -3l 1.base 2.collector 3.emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification %, 6 h s,201
2SD1802 024681 01 2 0 100 200 300 400 500 600 0.1 1 10 10 100 1000 1 10 100 1000 10 100 1000 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 100 1000 10 100 1000 10 100 1000 300 600 900 1200 0 300 600 900 1200 1 10 100 1000 2.7ma 2.4ma 3ma 2.1ma 1.8ma 1.5ma 1.2ma 0.9ma 0.6ma i b =0.3ma common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) i c h fe ?? v be i c ?? reverse voltage v (v) capacitance c (pf) f=1mhz i e =0/ i c =0 t a =25 static characteristic 20 c ob c ib v besat ?? t a =25 3000 t a =100 common emitter v ce =2v dc current gain h fe collector current i c (ma) t a p c ?? collector power dissipation p c (w) ambient temperature t a ( ) 3000 =20 t a =100 t a =25 3000 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) v cb / v eb c ob / c ib ?? i c v cesat ?? i c =20 t a =25 t a =100 3000 base-emitter saturation voltage v besat (mv) collector current i c (ma) collector current i c (ma) base-emitter voltage v be (v) common emitter v ce =2v t a = 1 0 0 t a = 2 5 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification %, 6 h s,201
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